Future Trends in Microelectronics

Future Trends in Microelectronics

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b (a) Metal a#39;Gate ( ) g/ate oxide Source a#39; Qaquot; Drain Figure 4. (a) A schematic diagram of a spin MOSFET. ... gain is the spin MOSFET.8 The source and drain, analogous to the spin FET, consist of ferromagnetic metals, as shown in Fig. ... number of elements needed than for implementation using CMOS.8 It is also proposed that spin MOSFET would have very good ... An early device demonstration of silicon spin diffusion transistor reported both the current gain and TMR of the order of IOanbsp;...

Title:Future Trends in Microelectronics
Author: Serge Luryi, Jimmy Xu, Alex Zaslavsky
Publisher:John Wiley & Sons - 2007-06-22

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